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USTC ya sami ci gaba mai mahimmanci a fagen masana'antar micro-nano Laser

Ƙungiyar bincike ta Yang Liang a Cibiyar Nazarin Ci gaba ta Suzhou a Jami'ar Kimiyya da Fasaha ta kasar Sin ta ɓullo da wata sabuwar hanya don masana'antu na ƙarfe oxide semiconductor Laser micro-nano masana'antu, wanda ya gane Laser bugu na ZnO semiconductor Tsarin da submicron daidaici, da kuma hade. shi da karfe Laser bugu , a karon farko tabbatar da hadedde Laser kai tsaye rubuce-rubucen microelectronic aka gyara da da'irori kamar diodes, triodes, memristors da boye-boye da'irori, don haka mika aikace-aikace al'amurran da suka shafi na Laser micro-nano aiki zuwa fagen microelectronics, a m Electronics, ci-gaba na'urori masu auna firikwensin, MEMS mai hankali da sauran filayen suna da muhimman abubuwan da ake bukata na aikace-aikace. An buga sakamakon binciken kwanan nan a cikin "Sadarwar yanayi" a ƙarƙashin taken "Laser Printed Microelectronics".

Kayan lantarki da aka buga wata fasaha ce da ta kunno kai wacce ke amfani da hanyoyin bugu don kera kayayyakin lantarki. Ya sadu da halaye na sassauci da keɓancewa na sabon ƙarni na samfuran lantarki, kuma zai kawo sabon juyin juya halin fasaha ga masana'antar microelectronics. A cikin shekaru 20 da suka gabata, bugu ta inkjet, canja wurin laser-induced (LIFT), ko wasu fasahohin bugu sun yi babban ci gaba don ba da damar ƙirƙira na'urorin microelectronic masu aiki da ƙwayoyin cuta ba tare da buƙatar muhalli mai tsabta ba. Koyaya, girman fasalin fasalin hanyoyin bugu na sama yawanci akan tsari na dubun microns ne, kuma galibi yana buƙatar tsari mai zafi mai zafi bayan aiwatarwa, ko dogaro da haɗakar matakai da yawa don cimma sarrafa na'urori masu aiki. Laser micro-nano fasaha fasahar utilizes da maras layi hulda tsakanin Laser bugun jini da kayan, kuma zai iya cimma hadaddun ayyuka Tsarin da ƙari masana'antu na na'urorin da suke da wuya a cimma ta hanyar gargajiya hanyoyin da daidaici na <100 nm. Duk da haka, mafi yawan Laser na yanzu micro-nano-fabricated Tsarin su ne guda polymer kayan ko karfe kayan. Rashin hanyoyin rubutun kai tsaye na Laser don kayan semiconductor shima yana da wahala a fadada aikace-aikacen fasahar sarrafa laser micro-nano zuwa fagen na'urorin microelectronic.

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A cikin wannan kasida, mai bincike Yang Liang, tare da haɗin gwiwar masu bincike a Jamus da Ostiraliya, innovatively ɓullo da Laser bugu a matsayin bugu da fasaha na'urorin lantarki aiki, gane semiconductor (ZnO) da madugu (Composite Laser bugu na daban-daban kayan kamar Pt da Ag). (Hoto na 1), kuma baya buƙatar kowane matakan aiwatar da zafi gaba ɗaya, kuma mafi ƙarancin girman fasalin shine <1 µm. Wannan ci gaban ya ba da damar tsara ƙira da bugu na masu gudanarwa, semiconductor, har ma da shimfidar kayan insulating bisa ga ayyukan na'urorin microelectronic, wanda ke haɓaka daidaito, sassauci, da sarrafa na'urorin bugu na microelectronic. A kan wannan, ƙungiyar binciken sun sami nasarar fahimtar haɗaɗɗen rubutun laser kai tsaye na diodes, memristors da da'irorin ɓoyayyen ɓoyayyiyar zahiri (Hoto 2). Wannan fasaha ta dace da bugu na inkjet na gargajiya da sauran fasahohi, kuma ana sa ran za a fadada shi zuwa bugu na nau'ikan P-type da nau'in nau'in semiconductor karfe oxide, samar da sabuwar hanyar da aka tsara don sarrafa hadaddun, manyan sikelin. na'urorin microelectronic masu girma uku masu aiki.

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Tass:https://www.nature.com/articles/s41467-023-36722-7


Lokacin aikawa: Maris-09-2023